Phase Change Memory Technology
Portfolio ID: 10-ITRI001-000322
TAEUS International Corporation is pleased to offer a large Phase Change Memory patent portfolio for sale from the following entities: Industrial Technology Research Institute, Hsinchu, Taiwan; Powerchip Semiconductor Corp.; Nanya Technology Corporation; ProMOS Technologies Inc.; and Winbond Electronics Corp.Phase Change Memory devices are non-volatile, highly readable, highly programmable, and require a lower driving voltage/current. Phase Change Memory is on the technological road map for next generation memory devices. Any company contemplating products in next generation memory devices could quickly create very nice patent protection for such products or add to their current patent protection by buying this portfolio.
The portfolio consists of 3 issued US patents, 34 US applications, and many patents and applications in Taiwan, China, and Japan.
IP in Portfolio
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CN101271862
Semiconductor device and fabrications thereoft -
CN101211959
Method of fabrication of phase-change memory -
US2009-0189140
Phase-change memory element -
CN101257085
Phase-change memory elementt -
CN101202326
Phase change memory device and method for (more...) -
US2009-0189142
Phase-change memory -
US2008-0042243
Phase change memory devices and methods for (more...) -
US2008-0265238
Phase change memory devices and methods for (more...) -
US2009-0250691
Phase change memory element and method for forming (more...) -
US2008-0296554
Phase change memory devices and fabrication (more...) -
US2008-0290335
Phase change memory device and method for (more...) -
US2008-0179585
Phase change memory device and method for (more...) -
US2008-0251498
Phase change memory device and fabrications (more...) -
US2007-0285962
Phase change memory device and fabrication method (more...) -
US2009-0057643
Phase change memory device and fabrication method (more...) -
US2007-0291533
Phase change memory device and fabrication method (more...) -
US2008-0296552
Phase change memory cell structures and methods (more...) -
US2009-0191367
Memory devices, stylus-shaped structures, (more...) -
US2008-0170431
Driving method and system for a phase change (more...) -
US2009-0080243
Device controlling phase change storage element (more...) -
JP2008-182230
Phase change memory device and method for (more...) -
JP2008-226427
Writing method and system for a phase change (more...) -
JP2008-283163
Phase-change memory element -
JP2008-193071
Phase-change memory element -
JP2008-171541
Driving method and system for a phase change (more...) -
JP2008-243355
Compensation circuit and memory with the same -
US2008-0283814
Phase-change memory element -
US2008-0186762t
Phase-change memory element -
CN101308903
Phase-change memory elementt (more...) -
US2009-0045386t
Phase-change memory element -
US2008-0197335
Semiconductor device and fabrications thereof -
US2008-0316847t
Sensing circuit of a phase change memory and (more...) -
US2008-0310217t
Writing circuit for a phase change memory -
US2008-0316803t
Sensing circuit of a phase change memory and (more...) -
US2009-0010047
Writing circuit for a phase change memory -
CN101093872
Phase change memory device and fabrication method (more...) -
US2008-0219046t
Writing method and system for a phase change (more...) -
CN101271959
Low-power phase-change memoryt -
CN101150172
Phase-change memory and fabrication method thereof -
CN101132048
Phase change memory cells and methods for (more...) -
CN101290798
Compensation circuit and memory with the same -
CN101286546
Phase change memory devices and methods for (more...) -
EP1953842
Phase change memory device and method for (more...) -
TWI297225
Phase change memory device and fabrication method (more...) -
TWI303875
Phase change memory device and fabrication method (more...) -
CN101136452
Phase change memory devices and methods for (more...) -
TWI305042
Phase change memory devices and methods for (more...)
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