Micron and Hynix DDR3 Circuit Extractions Available
Switching from DDR2 to DDR3 is not only beneficial, but also becoming a necessity. DDR3s have quickly moved to become the industry standard. That being said, not all DDR3s are made equal. Newer models are smaller and made out of better electrically conductive materials. These changes mean that there will be more room for more memory and less power needed to run it. TAEUS is offering special pricing on circuit extraction reports covering these new smaller geometries of DDR3, as well as other process technology analysis reports. These offers are good through September 28th, so act quickly!
Call us at 719-325-5000 or contact us through our website for more information.
We have many devices available, such as:
Micron MT41K512M DDR3 SDRAM
At 30nm, it is one of the smallest DRR3s on the market. DDR3Lm (1.35V) is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM (1.35V) device. It features a low current automatic self-refresh as well as a self-refresh temperature (SRT) function. The SRT on the Micron device reduces problems with over-heating. Programmable CAS on this device applies to both read and write latency. It also comes with a programmable posted CAS additive latency.
Hynix H5TQ2G63DFR DDR3 SDRAM
The H5TQ2G63BFR is a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.